13 research outputs found
Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced
project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV
n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m
pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Wafers
with 50 {\mu}m thick epilayer with a resistivity of 350 {\Omega}cm were used to
produce a fully depleted sensor. Laboratory tests conducted with a 90Sr source
show that the detector works satisfactorily after irradiation. The
signal-to-noise ratio is not seen to change up to fluence of 6 x 10^14 n_eq
/cm^2 . The signal time jitter was estimated as the ratio between the voltage
noise and the signal slope at threshold. At -35 {^\circ}C, sensor bias voltage
of 200 V and frontend power consumption of 0.9 W/cm^2, the time jitter of the
most-probable signal amplitude was estimated to be 21 ps for proton fluence up
to 6 x 10 n_eq/cm^2 and 57 ps at 1 x 10^16 n_eq/cm^2 . Increasing the sensor
bias to 250 V and the analog voltage of the preamplifier from 1.8 to 2.0 V
provides a time jitter of 40 ps at 1 x 10^16 n_eq/cm^2.Comment: Submitted to JINS
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Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend electronics and hexagonal pixels with 100 μm pitch. At a sensor bias voltage of 125 V, the detector provides full efficiency and average time resolution of 30, 25 and 17 ps in the overall pixel area for a power consumption of 0.4, 0.9 and 2.7 W/cm2, respectively. In this first prototype the time resolution depends significantly on the distance from the center of the pixel, varying at the highest power consumption measured between 13 ps at the center of the pixel and 25 ps in the inter-pixel region
20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer
A second monolithic silicon pixel prototype was produced for the MONOLITH
project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch,
readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with
50 {\mu}m thick epilayer of 350 {\Omega}cm resistivity were used to produce a
fully depleted sensor. Laboratory and testbeam measurements of the analog
channels present in the pixel matrix show that the sensor has a 130 V wide
bias-voltage operation plateau at which the efficiency is 99.8%. Although this
prototype does not include an internal gain layer, the design optimised for
timing of the sensor and the front-end electronics provides a time resolutions
of 20 ps.Comment: 11 pages, 11 figure
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Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP)drift(NP)gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 μm pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a 55Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the ^55Fe source limits the effective gain
Testbeam Results of the Picosecond Avalanche Detector Proof-Of-Concept Prototype
The proof-of-concept prototype of the Picosecond Avalanche Detector, a
multi-PN junction monolithic silicon detector with continuous gain layer deep
in the sensor depleted region, was tested with a beam of 180 GeV pions at the
CERN SPS. The prototype features low noise and fast SiGe BiCMOS frontend
electronics and hexagonal pixels with 100 {\mu}m pitch. At a sensor bias
voltage of 125 V, the detector provides full efficiency and average time
resolution of 30, 25 and 17 ps in the overall pixel area for a power
consumption of 0.4, 0.9 and 2.7 W/cm^2, respectively. In this first prototype
the time resolution depends significantly on the distance from the center of
the pixel, varying at the highest power consumption measured between 13 ps at
the center of the pixel and 25 ps in the inter-pixel region
The trigger and data acquisition system of the FASER experiment
Abstract The FASER experiment is a new small and inexpensive experiment that is placed 480 meters downstream of the ATLAS experiment at the CERN LHC. FASER is designed to capture decays of new long-lived particles, produced outside of the ATLAS detector acceptance. These rare particles can decay in the FASER detector together with about 500–1000 Hz of other particles originating from the ATLAS interaction point. A very high efficiency trigger and data acquisition system is required to ensure that the physics events of interest will be recorded. This paper describes the trigger and data acquisition system of the FASER experiment and presents performance results of the system acquired during initial commissioning.</jats:p
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9 )% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of % was measured together with a time resolution of ps at the highest preamplifier bias current working point of 150 A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current